Title :
New submicron MOSFET structural concept for suppression of hot carriers
Author :
Tasch, A.F. ; Shin, Hae-Young ; Maziar, C.M.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
A new structural concept for submicron MOSFETs is described for substantially suppressing adverse hot carrier effects. This structure differs from the well known LDD type of structure in that it has a more lightly doped n-type region located behind a very shallow, steeply profiled source/drain junction.
Keywords :
hot carriers; insulated gate field effect transistors; hot carrier suppression; lightly doped n-type region; shallow source/drain junction; steeply profiled source/drain junction; structural concept; submicron MOSFET;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900026
