Title :
A study of radiation vulnerability of ferroelectric material and devices
Author :
Coïc, Y.M. ; Musseau, O. ; Leray, J.L.
Author_Institution :
CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France
fDate :
6/1/1994 12:00:00 AM
Abstract :
The radiation effects on ferroelectric material and devices are presented, based on commercially available samples. After recalling the background, effects in ferroelectric PZT capacitors are presented, concerning dose, neutrons and fatigue associated with dose effects. Physical implications and interpretations are sketched. In a second stage, effects are studied at the complete non-volatile RAM device level. Vulnerability in dose, dose rate and neutron fluence of commercial 4 kbit ferroelectric RAM is addressed. 64 kbit results are mentioned in dose rate. These results are compared to previously published data from other manufacturers or laboratories and supplement them. In the appendix, equivalence between rad(Si) and rad(PZT) is discussed in the case of low energy “10 keV Aracor” X-rays and 60Co gamma rays
Keywords :
X-ray effects; capacitors; ferroelectric devices; ferroelectric materials; gamma-ray effects; lead compounds; neutron effects; piezoelectric materials; random-access storage; 10 keV; 4 kbit; 64 kbit; 60Co gamma rays; PZT; PbZrO3TiO3; X-rays; dose rate; fatigue; ferroelectric PZT capacitors; ferroelectric RAM; ferroelectric devices; ferroelectric material; neutron fluence; neutron irradiation; Capacitors; Fatigue; Ferroelectric films; Ferroelectric materials; Laboratories; Manufacturing; Neutrons; Nonvolatile memory; Radiation effects; Random access memory;
Journal_Title :
Nuclear Science, IEEE Transactions on
