Radiation hard LOCOS field oxide

Author

Neumeier, K. ; Bruemmer, H.P.

Author_Institution

Fraunhofer-Inst. fur Festkorpertechnologie, Munich, Germany

Volume

41

Issue

3

fYear

1994

fDate

6/1/1994 12:00:00 AM

Firstpage

572

Lastpage

576

Abstract

It is known that radiation hard field oxides (FOX) can be produced by combination of a thin thermal oxide and a thick P- or As-doped deposited oxide. The doping atoms serve as recombination centers and electron traps for radiation induced charges. This results in a distinctly lower oxide charge at the Si/SiO₂ interface compared to conventional thermal oxides and, therefore, higher radiation hardness. The radiation resistance of thermally grown FOX for LOCOS isolation cannot be improved much by changes in oxidation parameters. The newly developed radiation hard FOX is produced by local oxidation of P-doped poly-Si. This method preserves the advantages of the LOCOS technology. To distinguish this process from the regular LOCOS process we termed it LOPOX (Local Polysilicon Oxidation). Even with low doping concentrations radiation hardness is improved considerably compared to conventional thermal oxides

Keywords

CMOS integrated circuits; electron traps; electron-hole recombination; integrated circuit technology; oxidation; radiation hardening (electronics); semiconductor-insulator boundaries; silicon; silicon compounds; CMOS devices; LOCOS field oxide; LOPOX; Si-SiO₂; Si/SiO₂ interface; electron traps; local polysilicon oxidation; oxidation parameters; radiation hard field oxides; radiation induced charges; radiation resistance; recombination centers; thermal oxide; Atomic layer deposition; Atomic measurements; Doping; Electron traps; Metallization; Oxidation; Spontaneous emission; Surface resistance; Thermal resistance; Threshold voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.299801

Filename

299801