Title :
Burnout sensitivity of power MOSFETs operating in a switching converter
Author :
Tastet, P. ; Garnier, Jerome ; Constans, H. ; Tizon, A.H.
Author_Institution :
CNES, Toulouse, France
fDate :
6/1/1994 12:00:00 AM
Abstract :
Heavy ion tests of a switching converter using power MOSFETs have allowed us to identify the main parameters which affect the burnout sensitivity of these components. The differences between static and dynamic conditions are clarified in this paper
Keywords :
insulated gate field effect transistors; ion beam effects; power convertors; power transistors; sensitivity; switching circuits; burnout sensitivity; dynamic conditions; heavy ion tests; power MOSFET; static conditions; switching converter; Bipolar transistors; Current density; Electric breakdown; Linear particle accelerator; MOSFETs; Oscilloscopes; Protection; Switching converters; System testing; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
