Title :
Heavy ion microscopy of single event upsets in CMOS SRAMs
Author :
Metzger, S. ; Dreute, J. ; Heinrich, W. ; Rocher, H. ; Fischer, B.E. ; Harboe-Sørensen, R. ; Adams, L.
Author_Institution :
Fachbereich Phys., Siegen Univ., Germany
fDate :
6/1/1994 12:00:00 AM
Abstract :
The single event upset (SEU) imaging has been applied at the GSI heavy ion microprobe to determine the sensitivity of integrated circuits (IC) to heavy ion irradiation. This method offers the possibility to directly image those parts of an IC which are sensitive to ion-induced malfunctions. By a 3-dimensional simulation of charge collection across p-n-micro-junctions, we can predict SEU cross-sections. For a MHS65162 2k x 8bit CMOS SRAM we found two regions per bit with different sensitivity and measured a total cross-section of (71±18) μm 2 for a bitflip per cell and simulated 60 μm2 with an argon beam of 1.4 MeV/nucl. (LET of 19.7 MeV/(mg/cm2))
Keywords :
CMOS integrated circuits; SRAM chips; integrated circuit testing; ion beam effects; ion microscopy; 16 kbit; 3-dimensional simulation; CMOS SRAMs; GSI heavy ion microprobe; MHS65162; SEU cross-sections; SEU imaging; charge collection; heavy ion irradiation; heavy ion microscopy; integrated circuit sensitivity; ion-induced malfunctions; single event upsets; static RAM; Argon; Clouds; Electron beams; Electron emission; Focusing; Ion beams; Microscopy; Random access memory; Single event transient; Single event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on
