• DocumentCode
    1127498
  • Title

    Characterization of proton interactions in electronic components

  • Author

    Doucin, B. ; Patin, Y. ; Lochard, J.P. ; Beaucour, J. ; Carriere, T. ; Isabelle, D. ; Buisson, J. ; Corbiere, T. ; Bion, T.

  • Author_Institution
    CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France
  • Volume
    41
  • Issue
    3
  • fYear
    1994
  • fDate
    6/1/1994 12:00:00 AM
  • Firstpage
    593
  • Lastpage
    600
  • Abstract
    The responses of several np and pn diodes to 30, 100, 200 MeV protons were experimentally characterized. The results are compared with calculations using the HETC code. Well matching proton-induced SEU cross-sections are deduced
  • Keywords
    digital simulation; proton effects; semiconductor device models; semiconductor diodes; 100 MeV; 200 MeV; 30 MeV; HETC code; np diodes; pn diodes; proton interactions; proton-induced SEU cross-sections; Atomic measurements; Diodes; Electronic components; Energy loss; Length measurement; Predictive models; Protons; Random access memory; Silicon; Single event upset;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.299805
  • Filename
    299805
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1127498