High-frequency performance of submicrometer channel-length silicon MOSFETs

Author

Raynaud, C. ; Gautier, J. ; Guegan, G. ; Lerme, M. ; Playez, E. ; Dambrine, G.

Author_Institution

CEA LETI-DTA, Grenoble, France

Volume

12

Issue

12

fYear

1991

Firstpage

667

Lastpage

669

Abstract

Polycide-gate silicon n-channel MOSFETs were fabricated on the basis of a standard 0.5- mu m MOS technology and measured over the 1.5-26.5-GHz frequency range, in order to investigate the effects of channel-length reduction on device behavior at high frequency. Excellent microwave performances were obtained with a maximum operating frequency (f/sub max/) and a unity-current-gain frequency f/sub t/ near 20 GHz for 0.5- mu m-gate-length NMOS devices. An equivalent circuit for a MOSFET with its parasitic elements was extracted from measured S-parameter data. The influence of gate resistance, gate-to-drain overlap capacitance, substrate conductivity, and the transit-time effect between the source and drain on microwave characteristics was analyzed.<>

Keywords

elemental semiconductors; equivalent circuits; insulated gate field effect transistors; semiconductor device models; silicon; solid-state microwave devices; 0.5 micron; 1.5 to 26.5 GHz; NMOS devices; Si; device behavior; equivalent circuit; frequency range; gate resistance; gate-to-drain overlap capacitance; high frequency; maximum operating frequency; measured S-parameter data; microwave characteristics; microwave performances; model; n-channel MOSFETs; parasitic elements; polycide gate; submicrometer channel-length; substrate conductivity; transit-time effect; unity-current-gain frequency; Data mining; Electrical resistance measurement; Equivalent circuits; Frequency measurement; MOS devices; MOSFETs; Measurement standards; Microwave devices; Scattering parameters; Silicon;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.116949

Filename

116949