Novel in-situ doped polysilicon emitter process with buried diffusion source (BDS)

Author

Burghartz, Joachim N. ; Megdanis, Andrew C. ; Cressler, John D. ; Sun, J.Y.-C. ; Stanis, Carol L. ; Comfort, James H. ; Jenkins, Keith A. ; Cardone, Frank

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

12

Issue

12

fYear

1991

Firstpage

679

Lastpage

681

Abstract

An in-situ doped polysilicon emitter process for very shallow and narrow emitter formation and minimum emitter resistance is presented. An in-situ doped film was imbedded between two undoped poly spacer layers as a buried diffusion source (BDS) to reduce the emitter resistance and to form a high-quality poly/monosilicon interface. Transistors with an emitter area of 0.25 mu m*0.25 mu m and with nearly ideal I-V characteristics were fabricated. A cutoff frequency of 53 GHz and a minimum ECL gate delay of 26 ps were achieved using BDS poly emitter transistors with an emitter area of 0.35 mu m*4.0 mu m.<>

Keywords

bipolar transistors; emitter-coupled logic; semiconductor doping; silicon; 0.25 to 4 micron; 26 ps; 53 GHz; BDS; ECL gate delay; buried diffusion source; cutoff frequency; emitter area; in-situ doped film; in-situ doped polysilicon emitter process; minimum emitter resistance; narrow emitter formation; nearly ideal I-V characteristics; poly emitter transistors; shallow junctions; undoped polysilicon spacer layers; Associate members; Bipolar transistors; Cutoff frequency; Delay; Doping; Plugs; Shadow mapping; Sun; Surfaces; Thyristors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.116953

Filename

116953