Analytical Electron-Mobility Model for Arbitrarily Stressed Silicon

Author

Tan, Yaohua ; Li, Xiaojian ; Tian, Lilin ; Yu, Zhiping

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing

Volume

55

Issue

6

fYear

2008

fDate

6/1/2008 12:00:00 AM

Firstpage

1386

Lastpage

1390

Abstract

It was experimentally and numerically indicated that both the valley splitting and effective-mass variation contribute to the stress-induced enhancement of electron mobility in the MOSFET channel. In this paper, an analytical electron-mobility model for arbitrarily strained silicon is presented. The electron-mobility model includes the strain effects of both the effective-mass variation and valley degeneration. The expression of strained conduction band used in the analytical model is based on the theory and accords well with numerical results of nonlocal empirical pseudopotential method (EPM). By using the mobility model, mobilities under different stresses are investigated.

Keywords

MOSFET; electron mobility; elemental semiconductors; semiconductor device models; silicon; MOSFET channel; Si; arbitrarily stressed silicon; effective-mass variation contribute; electron-mobility model; nonlocal empirical pseudopotential method; strained conduction band; stress-induced enhancement; Analytical models; CMOS integrated circuits; CMOS technology; Capacitive sensors; Effective mass; Electron mobility; MOSFET circuits; Semiconductor device modeling; Silicon; Stress; $k cdot p$; $k cdot p$; Effective mass; electron-mobility model; empirical nonlocal pseudopotential;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2008.921074

Filename

4487138