• DocumentCode
    1128068
  • Title

    Double-barrier resonant tunnelling diode three-state logic

  • Author

    Sellai, A. ; Raven, M.S. ; Steenson, D.P. ; Chamberlain, J.M. ; Hinini, M. ; Hughes, D.H.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Nottingham Univ., UK
  • Volume
    26
  • Issue
    1
  • fYear
    1990
  • Firstpage
    61
  • Lastpage
    62
  • Abstract
    Primary three-state logic circuits (inverters, OR gates and flip-flops) have been produced using double-barrier GaAs/AlGaAs resonant tunnelling diodes. Circuit details, waveforms and three-state logic operations are described.
  • Keywords
    III-V semiconductors; aluminium compounds; flip-flops; gallium arsenide; logic circuits; ternary logic; tunnel diodes; GaAs-AlGaAs; OR gates; double-barrier resonant tunnelling diode; flip-flops; inverters; semiconductors; three-state logic; three-state logic circuits; three-state logic operations; waveforms;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900040
  • Filename
    44876
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1128068