A High-Temperature Die-Bonding Structure Fabricated at Low Temperature for Light-Emitting Diodes

Author

Li-Chin Cheng ; Chih-Ming Chen ; Ming-Guan Chen ; Chi-Chang Hu ; Hsin-Yi Jiang ; Ray-Hua Horng ; Dong-Sing Wuu

Author_Institution

Dept. of Chem. Eng., Nat. Chung Hsing Univ., Taichung, Taiwan

Volume

36

Issue

8

fYear

2015

fDate

Aug. 2015

Firstpage

835

Lastpage

837

Abstract

A trilayer of Sn/Bi/Sn was deposited on a heat sink substrate as the die-bonding material for a light-emitting diode. The eutectic feature of the Sn/Bi system allowed the die-bonding to be carried out at a low temperature using a facile thermocompression process. Two thin Sn layers were sacrificed to form two intermetallic compounds sandwiching the Bi layer, and this high-temperature die-bonding structure showed superior thermal management performance under harsh operation environments (high temperature/current) based on thermal infrared, thermal resistance, and derating analyses.

Keywords

bismuth; heat sinks; integrated optoelectronics; lead bonding; light emitting diodes; microassembling; thermal management (packaging); thermal resistance; tin; Sn-Bi-Sn; derating analysis; eutectic feature; facile thermocompression; harsh operation environments; heat sink substrate; high-temperature die-bonding structure; light emitting diodes; low temperature; thermal infrared analysis; thermal management performance; thermal resistance analysis; Bismuth; Light emitting diodes; Thermal analysis; Thermal management; Thermal resistance; Tin; Diffusion; die-bonding; diffusion; thermal management;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2451018

Filename

7140751