• DocumentCode
    1129779
  • Title

    Near-infrared optical upconverter based on i-In0.53Ga0.47As/C60 photovoltaic heterojunction

  • Author

    Chen, Jiann-Jong ; Ban, D. ; Helander, M.G. ; Lu, Zhi ; Graf, M. ; SpringThorpe, A.J. ; Liu, H.C.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Waterloo, ON
  • Volume
    45
  • Issue
    14
  • fYear
    2009
  • Firstpage
    753
  • Lastpage
    755
  • Abstract
    A near-infrared to visible light optical upconverter by the integration of an i-In0.53Ga0.47As/C60 junction and an organic light emitting diode is reported. This device shows the photovoltaic effect of an i-In0.53Ga0.47As/C60 heterojunction and potential application in a pixelless upconversion imaging device.
  • Keywords
    fullerenes; gallium arsenide; indium compounds; light emitting diodes; optical frequency conversion; photovoltaic effects; semiconductor heterojunctions; In0.53Ga0.47As-C60; near-infrared optical upconverter; organic light emitting diode; photovoltaic effect; photovoltaic heterojunction; pixelless upconversion;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2009.3592
  • Filename
    5159727
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1129779