• DocumentCode
    1129802
  • Title

    Frequency performance enhancement of AlGaN/GaN HEMTs on diamond

  • Author

    Diduck, Quentin ; Felbinger, Jonathan ; Eastman, L.F. ; Francis, Daniel ; Wasserbauer, J. ; Faili, F. ; Babic, D.I. ; Ejeckam, F.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY
  • Volume
    45
  • Issue
    14
  • fYear
    2009
  • Firstpage
    758
  • Lastpage
    759
  • Abstract
    The performance of an AlGaN/GaN high electron mobility transistor (HEMT) on diamond substrate is reported. Presented is a device with a gate footprint LG =40 nm and a periphery WG = 100 mum that exhibits fT = 85 GHz and fmax = 95 GHz. It is believed that this represents the best frequency performance of a GaN-on-diamond HEMT.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; AlGaN-GaN; C; HEMT; diamond substrate; frequency performance; gate footprint; high electron mobility transistor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2009.1122
  • Filename
    5159730
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1129802