DocumentCode :
1129812
Title :
P and B doped Si resonant interband tunnel diodes with as-grown negative differential resistance
Author :
Thompson, P.E. ; Jernigan, G.G. ; Park, S.-Y. ; Yu, Rong ; Anisha, R. ; Berger, P.R. ; Pawlik, David ; Krom, Raymond ; Rommel, Sean L.
Author_Institution :
Naval Res. Lab., Washington, DC
Volume :
45
Issue :
14
fYear :
2009
Firstpage :
759
Lastpage :
761
Abstract :
Robust Si resonant interband tunnel diodes have been designed and tested that demonstrate as-grown negative differential resistance at room temperature with peak-to-valley current ratios (PVCR) up to 2.5 and peak current densities in the order of 1 kA/cm2. The as-grown Si p+in+ structures were synthesised using solid source molecular beam epitaxy, incorporating B and P delta-doped layers. Both structures have shown thermal stability after 1 min post-growth anneals up through 675degC and the PVCR improves to 2.8 for a 575degC 1 min anneal.
Keywords :
annealing; boron; current density; elemental semiconductors; phosphorus; resonant tunnelling diodes; semiconductor doping; semiconductor epitaxial layers; silicon; thermal stability; PVCR; Si:B; Si:P; annealing; as-grown negative differential resistance; current density; delta-doped layer; p+in+ structure; peak-valley current ratio; robust silicon resonant interband tunnel diode; solid source molecular beam epitaxy; temperature 293 K to 298 K; temperature 575 degC; temperature 675 degC; thermal stability; time 1 min;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2009.1007
Filename :
5159731
Link To Document :
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