Optimization of the carrier-induced effective index change in InGaAsP waveguides-application to tunable Bragg filters

Author

Weber, Jean-Pierre

Author_Institution

Fibre Opt. Res. Center, Ericsson Components AB, Stockholm, Sweden

Volume

30

Issue

8

fYear

1994

fDate

8/1/1994 12:00:00 AM

Firstpage

1801

Lastpage

1816

Abstract

A model for the refractive index of InGaAsP and its dependence on the carrier density is presented. Full transport calculations for electrons and holes in heterostructures, including temperature effects, are used to show that the maximum injected carrier density is limited by electron heterojunction leakage for low-cladding doping and by recombination in the tuning layer for high-cladding doping. With the effective index method, we can then compute the maximum propagation constant change as a function of the waveguide geometry. Thermal effects are important only in the case of poor heatsinking. Using these results, we can estimate a maximum tuning range of more than 15 nm for optimized Bragg reflection gratings

Keywords

III-V semiconductors; carrier density; diffraction gratings; gallium arsenide; indium compounds; integrated optics; optical filters; optical waveguides; optimisation; refractive index; tuning; InGaAsP; InGaAsP waveguides; carrier density; carrier-induced effective index change; effective index method; electron heterojunction leakage; electrons; heterostructures; high-cladding doping; holes; low-cladding doping; maximum injected carrier density; maximum propagation constant change; optimization; optimized Bragg reflection gratings; recombination; refractive index; temperature effects; thermal effects; transport calculations; tunable Bragg filters; tuning layer; waveguide geometry; Charge carrier density; Charge carrier processes; Doping; Heterojunctions; Propagation constant; Refractive index; Semiconductor process modeling; Spontaneous emission; Temperature; Waveguide transitions;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.301645

Filename

301645