DocumentCode :
1130650
Title :
2.5 dB NF 3.1-10.6 GHz CMOS UWB LNA with small group-delay variation
Author :
Yang, H.-Y. ; Lin, Y.-S. ; Chen, C.-C.
Author_Institution :
Nat. Chi Nan Univ., Puli
Volume :
44
Issue :
8
fYear :
2008
Firstpage :
528
Lastpage :
529
Abstract :
A 3.1-10.6 GHz ultra-wideband low-noise amplifier (UWB LNA) with excellent phase linearity property (group-delay variation is only plusmn 16.7 ps across the whole band) using standard 0.13 mum CMOS technology is reported. To achieve high and flat gain and small group-delay variation at the same time, the inductive peaking technique is adopted in the output stage for bandwidth enhancement. The UWB LNA achieved input return loss (S11) of -17.5 to -33.6 dB, output return loss (S22) of -14.4 to -16.3 dB, flat forward gain (S22) of 7.92 plusmn 0.23 dB, and reverse isolation (S12) of -25.8 to -41.9 dB over the 3.1-10.6 GHz band of interest. A state-of-the-art noise figure (NF) of 2.5 dB was achieved at 10.5 GHz.
Keywords :
CMOS integrated circuits; low noise amplifiers; CMOS technology; NF; UWB LNA; bandwidth enhancement; group-delay variation; inductive peaking technique; state-of-the-art noise figure; ultra-wideband low-noise amplifier;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20083425
Filename :
4489882
Link To Document :
بازگشت