Wavelength dependent characteristics of high-speed metamorphic photodiodes

Author

Jang, J.H. ; Cueva, G. ; Sankaralingam, R. ; Fay, P. ; Hoke, W.E. ; Adesida, I.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

Volume

15

Issue

2

fYear

2003

Firstpage

281

Lastpage

283

Abstract

Double-heterojunction photodiodes based on GaAs metamorphic growth technology are described. The effect of the large bandgap InAlAs layer incorporated in the device heterostructure was examined by measuring wavelength dependent responsivities and bandwidths at 0.85-, 1.33-, and 1.55-μm illumination. The photodiodes exhibited 0.4 A/W responsivity and over 50-GHz bandwidth for 1.55-μm laser illumination. The bias voltage required to achieve the maximum bandwidth was measured to be less than -1 V.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; indium compounds; leakage currents; photodiodes; 0.85 micron; 1.33 micron; 1.55 micron; 50 GHz; A/W responsivity; GaAs; GaAs metamorphic growth technology; InAlAs-InGaAs-GaAs; bias voltage; double-heterojunction photodiodes; high-speed metamorphic photodiodes; large bandgap InAlAs layer; low-leakage current; wavelength dependent characteristics; wavelength dependent responsivities; Anodes; Bandwidth; Contact resistance; Gallium arsenide; Lighting; Optoelectronic devices; Photodiodes; Photonic band gap; Radio frequency; Wavelength measurement;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2002.806886

Filename

1174146