Transient Turn-ON Characteristics of the Fin p-Body IGBT

Author

Hao Feng ; Wentao Yang ; Onozawa, Yuichi ; Yoshimura, Takashi ; Tamenori, Akira ; Sin, Johnny K. O.

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China

Volume

62

Issue

8

fYear

2015

fDate

Aug. 2015

Firstpage

2555

Lastpage

2561

Abstract

In this paper, the transient turn-ON performance of the 1200 V-class fin p-body insulated gate bipolar transistor (Fin-p IGBT) is numerically analyzed and experimentally characterized. Analysis shows that the gate self-charging effect at the turn-ON transient of the device can effectively be suppressed due to its unique structural features of wide trenches and spacer gates. As a result, the Fin-p IGBT demonstrates excellent controllability on the turn-ON dV_CE/dt of the IGBT, and hence the reverse-recovery dV_KA/dt of the free-wheeling diode. Compared with conventional floating p-body IGBTs, the Fin-p IGBT can achieve a significant reduction (up to 82%) in the reverse-recovery dV_KA/dt, which is of great merit in suppressing the electromagnetic interference noise. Moreover, the turn-ON energy loss of the Fin-p IGBT can be reduced by 53% compared with that of the conventional one at the same reverse-recovery dV_KA/dt of 10 kV/μs.

Keywords

electromagnetic interference; insulated gate bipolar transistors; semiconductor device noise; Fin p-body IGBT; electromagnetic interference noise; free-wheeling diode; gate self-charging effect; insulated gate bipolar transistor; reverse-recovery; spacer gates; structural features; transient turn-ON characteristics; transient turn-ON performance; turn-ON energy loss; voltage 1200 V; wide trenches; Capacitance; Controllability; Insulated gate bipolar transistors; Integrated circuits; Logic gates; Noise; Transient analysis; Electromagnetic interference (EMI) noise; fin p-body; insulated gate bipolar transistor (IGBT); reverse-recovery $dV/dt$ controllability; reverse-recovery dV/dt controllability; turn-ON energy loss ( $E_{mathrm{{scriptscriptstyle ON}}})$; turn-ON energy loss (EON).;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2015.2445350

Filename

7145407