Title :
Optimization of bistable planar resonators operated near half the band gap
Author :
Peschel, U. ; Peschel, Thomas ; Lederer, F.
Author_Institution :
Fac. of Phys. & Astron., Friedrich-Schiller-Univ., Jena, Germany
fDate :
5/1/1994 12:00:00 AM
Abstract :
By using a modal approach that describes the optical response of a large class of nonlinear planar resonators under pulsed beam excitation we derive conditions to optimize the device with respect to different criteria. The influence of the nonlinearity is taken into account for both the cavity and the reflectors. The procedure results in simple algebraic formulas for the cavity thickness and the number of unit cells building the reflectors. The results hold likewise for microresonators of finite size and provide experimentalists with a useful tool to fabricate appropriate resonators for all optical switching operations
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; optical Kerr effect; optical bistability; optical resonators; optical switches; optimisation; semiconductor switches; GaAlAs; GaAlAs planar semiconductor resonators; algebraic formulas; all optical switching operations; band gap; bistable planar resonators; cavity thickness; finite size; microresonators; modal approach; nonlinear planar resonators; optical response; optimization; pulsed beam excitation; reflectors; unit cells; Microcavities; Molecular beam epitaxial growth; Nonlinear optics; Optical arrays; Optical bistability; Optical devices; Optical resonators; Optical saturation; Photonic band gap; Surface emitting lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
