Modeling and performance analysis of Germanium based p-i-n solar cells

Author

Chowdhury, Farhan Shadman ; Taraque, Asif Reza

Author_Institution

Dept. of Electr., Electron. & Commun. Eng., Mil. Inst. of Sci. & Technol., Dhaka, Bangladesh

fYear

2014

fDate

10-12 April 2014

Firstpage

1

Lastpage

5

Abstract

This paper concentrates on the modeling of a Germanium based p-i-n solar cell and analyze the performance of it at different doping concentrations, light intensity and temperature. In this paper a virtual structure of Germanium based p-i-n solar cell was modeled and then a major analysis was done to increase the efficiency of the highly demanding solar cell by changing one of the most important parameters: the doping concentration of the p and n type Germanium doping. The doping concentration of the p-type i.e. the acceptor Germanium has been kept constant and the doping concentration of the donor atom were changed to find the performance of the solar cell. This analysis gives an excellent result with a maximum efficiency of 26.04% and a fill factor of 89.63%.

Keywords

doping; germanium; solar cells; Ge; donor atom; doping concentrations; fill factor; germanium based p-i-n solar cells; solar cell performance; Analytical models; Charge carrier processes; Doping; Germanium; P-i-n diodes; PIN photodiodes; Photovoltaic cells; Doping Concentration; Efficiency; Fill Factor; Germanium; Modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering and Information & Communication Technology (ICEEICT), 2014 International Conference on

Conference_Location

Dhaka

Print_ISBN

978-1-4799-4820-8

Type

conf

DOI

10.1109/ICEEICT.2014.6919151

Filename

6919151