Title :
Spotlight on memory: an optically biased, single-ended, three transistor, fully static RAM cell
Author_Institution :
TRANSNET, Zagreb, Croatia
Abstract :
A single-ended static memory scheme combining advantages of both a one-transistor dynamic RAM (DRAM) cell and a six-transistor static RAM (SRAM) cell is proposed in this article. For the first time, optical bias is introduced, converting the classical complementary metal-oxide semiconductor (CMOS) RAM to an optoelectronic device. The cell structure is highly scalable and cost effective. Various approaches and schemes were applied to combine advantages of static and dynamic RAM memories, striving to shorten access times, lower power dissipation, and decrease cell area. This is particularly true for system-on-a-chip (SoC) and embedded memories. Here, the novel approach towards the same goal is proposed and simulated, introducing standard CMOS technology. A single-ended, three-transistor, fully static RAM cell is demonstrated.
Keywords :
CMOS memory circuits; SRAM chips; optoelectronic devices; system-on-chip; CMOS RAM; access times; cell area; cell structure; cost effective; embedded memory; fully static RAM cell; memory cell; metal-oxide semiconductor; one-transistor dynamic RAM; optical bias; optoelectronic device; power dissipation; single-ended static memory scheme; six-transistor static RAM cell; system-on-a-chip; CMOS technology; Costs; DRAM chips; MOS devices; Optical devices; Optoelectronic devices; Power dissipation; Random access memory; Read-write memory; System-on-a-chip;
Journal_Title :
Circuits and Devices Magazine, IEEE
DOI :
10.1109/MCD.2004.1343245
