• DocumentCode
    113274
  • Title

    Reaction-diffusion model for interface traps induced by BTS stress including H+, H and H2 as diffusion species

  • Author

    Boubaaya, Mohamed ; Tahi, Hakim ; Djezzar, Boualem ; Benmassai, Karim ; Benabdelmoumene, Abdelmadjid ; Goudjil, Mohamed ; Doumaz, Djamila ; Hemida, Abdelhak Feraht

  • Author_Institution
    Microelectron. & Nanotechnol. Div., Centre de Dev. des Technol. Av., Algiers, Algeria
  • fYear
    2014
  • fDate
    16-18 Dec. 2014
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    Negative and positive bias temperature instability (NBTI and PBTI) are described in the same model using the Reaction-Diffusion (RD) by taking into account all protagonist diffusion hydrogenate species; hydrogen atom (H), proton (H+) and hydrogen molecular (H2). This model is based on the probability that the passivated dangling bonds at the interface of silicon-oxide release the hydrogen H or proton H+. This probability is expressed as a function of experimental parameters.
  • Keywords
    MOSFET; dangling bonds; elemental semiconductors; hydrogen ions; hydrogen neutral atoms; hydrogen neutral molecules; interface states; negative bias temperature instability; passivation; reaction-diffusion systems; silicon; BTS stress; Si-H; Si-H2; interface traps; negative bias temperature instability; passivated dangling bonds; positive bias temperature instability; probability; reaction-diffusion model; Data models; Equations; Hydrogen; Mathematical model; Semiconductor device modeling; Silicon; Stress; NBTI; PBTI; hydrogen; model; reaction-diffusion;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design & Test Symposium (IDT), 2014 9th International
  • Conference_Location
    Algiers
  • Type

    conf

  • DOI
    10.1109/IDT.2014.7038619
  • Filename
    7038619
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=113274