Title :
Top-down approach for fabricating InP nanowires with ohmic metal contacts
Author :
Naureen, S. ; Shahid, N. ; Vora, K. ; Lysevych, M. ; Tan, H.H. ; Jagadish, C. ; Karouta, F.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
Electrical contacts between metals and semiconductors are fundamentally important for practical semiconductor devices. This work reports the electrical characterization of nanowire arrays fabricated by a top-down approach, where electron beam lithography (EBL) and a highly anisotropic Cl2/H2/Ar inductively coupled plasma (ICP) reactive ion etching (RIE) is utilised to generate vertical arrays of InP nanowire arrays. Preliminary results show ohmic behavior from these arrays.
Keywords :
III-V semiconductors; electron beam lithography; elemental semiconductors; germanium; gold; indium compounds; nanofabrication; nanolithography; nanowires; nickel; ohmic contacts; semiconductor growth; semiconductor-metal boundaries; sputter etching; Ge-Ni-Au-InP; Ohmic metal contacts; anisotropic inductively coupled plasma reactive ion etching; electrical contacts; electron beam lithography; nanowire arrays; top-down approach; Etching; Fabrication; Indium phosphide; Iterative closest point algorithm; Metals; Nanowires; Plasmas; ICP etching I-V characteristics; nanopillars/nanowires; ohmic contacts;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
978-1-4799-6867-1
DOI :
10.1109/COMMAD.2014.7038636
