DocumentCode
113294
Title
Positioning of the active region in broad-waveguide laser for optimized hole injection
Author
Lysevych, M. ; Tan, H.H. ; Karouta, F. ; Jagadish, C.
Author_Institution
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
fYear
2014
fDate
14-17 Dec. 2014
Firstpage
41
Lastpage
43
Abstract
The active region position in broad-waveguide lasers can significantly influence the performance of the device due to significant differences in mobility between electrons and holes. An increase in output power by 25% was observed in lasers with the active region positioned close to the p-cladding layer.
Keywords
electron mobility; hole mobility; quantum well lasers; waveguide lasers; active region position; broad-waveguide laser; electron mobility; hole injection; hole mobility; output power; p-cladding layer; Educational institutions; Optical device fabrication; Optical waveguides; Performance evaluation; Quantum well lasers; Waveguide lasers; Diode Lasers; Lasers; Quantum Well Lasers; Semiconductor Lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on
Conference_Location
Perth, WA
Print_ISBN
978-1-4799-6867-1
Type
conf
DOI
10.1109/COMMAD.2014.7038647
Filename
7038647
Link To Document