Title :
Positioning of the active region in broad-waveguide laser for optimized hole injection
Author :
Lysevych, M. ; Tan, H.H. ; Karouta, F. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
The active region position in broad-waveguide lasers can significantly influence the performance of the device due to significant differences in mobility between electrons and holes. An increase in output power by 25% was observed in lasers with the active region positioned close to the p-cladding layer.
Keywords :
electron mobility; hole mobility; quantum well lasers; waveguide lasers; active region position; broad-waveguide laser; electron mobility; hole injection; hole mobility; output power; p-cladding layer; Educational institutions; Optical device fabrication; Optical waveguides; Performance evaluation; Quantum well lasers; Waveguide lasers; Diode Lasers; Lasers; Quantum Well Lasers; Semiconductor Lasers;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
978-1-4799-6867-1
DOI :
10.1109/COMMAD.2014.7038647
