DocumentCode
1133552
Title
Temperature independent quantum well FET with delta channel doping
Author
Young, P.G. ; Alterovitz, S.A. ; Schacham, S.E. ; Haugland, E.J.
Author_Institution
NASA Lewis Res. Center, Cleveland, OH, USA
Volume
28
Issue
14
fYear
1992
fDate
7/2/1992 12:00:00 AM
Firstpage
1352
Lastpage
1354
Abstract
A temperature independent device is presented which uses a quantum well structure and delta doping within the channel. The device requires a high delta doping concentration within the channel to achieve a constant Hall mobility and carrier concentration across the temperature range 300-1.4 K. Transistors were RF tested using on-wafer probing and a constant Gmax and Fmax were measured over the temperature range 300-70 K.
Keywords
Hall effect; carrier density; doping profiles; high electron mobility transistors; semiconductor quantum wells; 300 to 1.4 K; FET; carrier concentration; constant Hall mobility; delta channel doping; doping concentration; on-wafer probing; quantum well structure; temperature independent device;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920858
Filename
149401
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