• DocumentCode
    1134499
  • Title

    Sinusoidal and digital high-speed modulation of p-type substrate mass-transported diode lasers

  • Author

    Tsang, D.Z. ; Liau, Z.L.

  • Author_Institution
    MIT Lincoln Laboratory, Lexington, MA, USA
  • Volume
    5
  • Issue
    3
  • fYear
    1987
  • fDate
    3/1/1987 12:00:00 AM
  • Firstpage
    300
  • Lastpage
    304
  • Abstract
    The modulation characteristics of GaInAsP diode lasers grown on p -type substrates have been studied on devices in which the parasitic bonding pads have been eliminated. The lasers have thresholds as low as 4.5 mA. The small-signal sinusoidal response is comparable to similar lasers made on n -type substrates. A small-signal -3-dB frequency as high as 16.4 GHz has been measured with a 175- μm-long laser. The laser responds to large-signal digital word sequences at rates of 16 Gbit/s.
  • Keywords
    Optical fiber transmitters, lasers; Bonding; Contact resistance; Digital modulation; Diode lasers; Electrical capacitance tomography; Indium phosphide; Optical modulation; Parasitic capacitance; Substrates; Zinc;
  • fLanguage
    English
  • Journal_Title
    Lightwave Technology, Journal of
  • Publisher
    ieee
  • ISSN
    0733-8724
  • Type

    jour

  • DOI
    10.1109/JLT.1987.1075505
  • Filename
    1075505
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1134499