Title :
High-saturation current wide-bandwidth photodetectors
Author :
Tulchinsky, David A. ; Li, Xiaowei ; Li, Ning ; Demiguel, Stéphane ; Campbell, Joe C. ; Williams, Keith J.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
This paper describes the design and performance of two wide-bandwidth photodiode structures. The partially depleted absorber photodiode utilizes an absorbing layer consisting of both depleted and undepleted In0.53Ga0.47As layers. These photodiodes have achieved saturation currents (bandwidths) of >430 mA (300 MHz) and 199 mA (1 GHz) for 100-μm-diameter devices and 24 mA (48 GHz) for 100-μm2 area devices. Charge compensation has also been utilized in a similar, but modified In0.53Ga0.47As-InP unitraveling-carrier photodiode design to predistort the electric field in the depletion region in order to mitigate space charge effects. For 20-μm-diameter photodiodes the large-signal 1-dB compression current and bandwidth were ∼90 mA and 25 GHz, respectively.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; optical saturable absorption; photodetectors; photodiodes; space charge; 100 mum; 199 mA; 20 mum; 24 mA; 25 GHz; 300 GHz; 48 GHz; 90 mA; In0.53Ga0.47As-InP; charge compensation; compression current; depleted In0.53Ga0.47As layer; high-power photodetectors; high-saturation current; partially depleted absorber photodiode; sheet resistance; space charge effects; undepleted In0.53Ga0.47As layer; unitraveling-carrier photodiode design; wide-bandwidth photodetectors; wide-bandwidth photodiode; Bandwidth; Charge carrier processes; Linear antenna arrays; Optical arrays; Optical fiber communication; Optical saturation; Photoconductivity; Photodetectors; Photodiodes; Space charge; High-power photodetectors; photodetectors; photodiodes; saturation current; sheet resistance; space-charge effect;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2004.831951
