• DocumentCode
    1136014
  • Title

    Very low-voltage (0.8V) CMOS receiver frontend for 5 GHz RF applications

  • Author

    El-Gamal, M.N. ; Lee, K.H. ; Tsang, T.K.

  • Author_Institution
    Microelectron. & Comput. Syst. Lab., McGill Univ., Montreal, Que., Canada
  • Volume
    149
  • Issue
    56
  • fYear
    2002
  • Firstpage
    355
  • Lastpage
    362
  • Abstract
    A fully integrated low-voltage RF receiver front end for 5 GHz radio applications, implemented in a standard 0.18 μm CMOS technology, is presented. The receiver consists of a differential low noise amplifier, an active mixer, and a quadrature voltage-controlled oscillator. The complete receiver is packaged in a standard 24-pin ceramic flat pack and consumes 56 mW from a 0.8 V supply. Measurement results show that the receiver has an overall noise figure of 7 dB, a -1 dBm input-referred IIP3, and 22 dB of image rejection. A stand-alone single-ended version of the LNA is also presented. Simple mechanisms for tuning the gain and the centre frequency of the LNA are proposed. With a supply voltage of 1 V, the LNA provides a power gain of 13.2 dB, has a noise figure of 2.5 dB, and over 10 dB of gain control and 360 MHz of frequency tuning. The LNA still operates well from a supply voltage as low as 0.7 V, providing a power gain of 7 dB.
  • Keywords
    CMOS integrated circuits; low-power electronics; radio receivers; radiofrequency integrated circuits; 0.18 micron; 0.8 V; 13.2 dB; 2.5 dB; 5 GHz; 56 mW; 7 dB; CMOS low-voltage RF receiver front-end; active mixer; ceramic flat pack; differential low-noise amplifier; frequency tuning; gain control; image rejection; input-referred IIP3; noise figure; power gain; quadrature voltage-controlled oscillator;
  • fLanguage
    English
  • Journal_Title
    Circuits, Devices and Systems, IEE Proceedings -
  • Publisher
    iet
  • ISSN
    1350-2409
  • Type

    jour

  • DOI
    10.1049/ip-cds:20020605
  • Filename
    1176586