Title :
Very low-voltage (0.8V) CMOS receiver frontend for 5 GHz RF applications
Author :
El-Gamal, M.N. ; Lee, K.H. ; Tsang, T.K.
Author_Institution :
Microelectron. & Comput. Syst. Lab., McGill Univ., Montreal, Que., Canada
Abstract :
A fully integrated low-voltage RF receiver front end for 5 GHz radio applications, implemented in a standard 0.18 μm CMOS technology, is presented. The receiver consists of a differential low noise amplifier, an active mixer, and a quadrature voltage-controlled oscillator. The complete receiver is packaged in a standard 24-pin ceramic flat pack and consumes 56 mW from a 0.8 V supply. Measurement results show that the receiver has an overall noise figure of 7 dB, a -1 dBm input-referred IIP3, and 22 dB of image rejection. A stand-alone single-ended version of the LNA is also presented. Simple mechanisms for tuning the gain and the centre frequency of the LNA are proposed. With a supply voltage of 1 V, the LNA provides a power gain of 13.2 dB, has a noise figure of 2.5 dB, and over 10 dB of gain control and 360 MHz of frequency tuning. The LNA still operates well from a supply voltage as low as 0.7 V, providing a power gain of 7 dB.
Keywords :
CMOS integrated circuits; low-power electronics; radio receivers; radiofrequency integrated circuits; 0.18 micron; 0.8 V; 13.2 dB; 2.5 dB; 5 GHz; 56 mW; 7 dB; CMOS low-voltage RF receiver front-end; active mixer; ceramic flat pack; differential low-noise amplifier; frequency tuning; gain control; image rejection; input-referred IIP3; noise figure; power gain; quadrature voltage-controlled oscillator;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
DOI :
10.1049/ip-cds:20020605