DocumentCode
1136686
Title
InAs/GaSb/InSb short-period super-lattice diode lasers emitting near 3.3 μm at room-temperature
Author
Gassenq, A. ; Boissier, G. ; Grech, P. ; Narcy, G. ; Baranov, A.N. ; Tournie, E.
Author_Institution
Inst. d´Electron. du Sud (IES), Univ. Montpellier, Montpellier
Volume
45
Issue
3
fYear
2009
Firstpage
165
Lastpage
167
Abstract
Laser diodes based on 4ML InAs/3ML GaSb/1ML InSb/3ML GaSb short-period superlattices (SPSLs) for emission in the 3-3.5 mum wavelength range have been investigated. Lasing is demonstrated up to 300-K in pulsed conditions and up to 200-K under continuous wave operation. Laser emission is centred at 3.3 mum, a technologically very important wavelength. The results demonstrate the potential of these new active zones for mid-IR laser diodes.
Keywords
III-V semiconductors; gallium compounds; indium compounds; infrared spectra; laser beams; semiconductor lasers; semiconductor superlattices; InAs-GaSb-InSb; SPSL; continuous wave operation; laser emission; mid-IR laser diode; short-period superlattice diode laser; temperature 293 K to 298 K; wavelength 3 mum to 3.5 mum;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20092882
Filename
4770459
Link To Document