• DocumentCode
    1138077
  • Title

    Integrated RC cell for time-invariant shaping amplifiers

  • Author

    Fiorini, C. ; Porro, M.

  • Author_Institution
    Dipt. di Elettronica e Informazione, Politecnico di Milano, Italy
  • Volume
    51
  • Issue
    5
  • fYear
    2004
  • Firstpage
    1953
  • Lastpage
    1960
  • Abstract
    Time-invariant shaping amplifiers, like semi-Gaussian shapers, are widely used to provide the best noise performances in detection systems based on high-resolution X-ray or γ-ray detectors. A new "RC" cell which can be used for the realization of integrated semi-Gaussian shapers either with real or with complex poles has been designed. The proposed solution, which allows to implement RC time constants in the order of few μs, is based on the well known technique of demagnification of the current flowing in a resistor R by means of the use of current mirrors. The architecture here adopted allows a more flexible coupling of the cell with the pole-zero network following the preamplifier and a precise and stable implementation of the desired time constant, for given values of R and C. Moreover, it can be biased with low currents, in order to minimize the shaper contribution to the overall parallel electronic noise, without affecting the precision of the time constant. A shaping amplifier based on this cell has been designed in the 0.35 μm AMS technology. The main features of the circuit, the simulations of noise performances, and the preliminary experimental results of the first prototype are presented in this paper.
  • Keywords
    RC circuits; VLSI; X-ray detection; current mirrors; gamma-ray detection; noise; position sensitive particle detectors; preamplifiers; readout electronics; silicon radiation detectors; RC cell; RC time constants; VLSI circuits; current mirrors; demagnification; gamma-ray detectors; high-resolution X-ray; integrated semiGaussian shapers; noise performances; parallel electronic noise; pole-zero network; preamplifier; readout electronics; resistor; silicon drift detectors; time constant; time-invariant shaping amplifiers; Circuit noise; Circuit simulation; Gamma ray detection; Gamma ray detectors; Mirrors; Noise shaping; Preamplifiers; Resistors; X-ray detection; X-ray detectors; Readout electronics; VLSI cicuits; shaping amplifier; silicon detectors;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2004.835578
  • Filename
    1344267