Title :
Substrate current model for submicrometer MOSFETs based on mean free path analysis
Author :
Hwang, Chang G. ; Dutton, R.W.
Author_Institution :
Integrated Circuits Lab., Stanford Univ., CA, USA
fDate :
7/1/1989 12:00:00 AM
Abstract :
The nonequilibrium effects of hot carriers are investigated to analyze avalanche generation for submicrometer MOSFET devices. A simple analytical expression for the impact ionization utilizing the mean free path concept is developed. It is incorporated into a conventional drift-diffusion equation solver (PISCES) to obtain the substrate current in submicrometer MOSFET devices. The transconductance for high drain bias and breakdown conditions are analyzed based on the proposed impact ionization model
Keywords :
hot carriers; impact ionisation; insulated gate field effect transistors; semiconductor device models; PISCES; avalanche generation; breakdown conditions; drift-diffusion equation solver; high drain bias; hot carriers; impact ionization; mean free path analysis; nonequilibrium effects; submicrometer MOSFETs; transconductance; Analytical models; Charge carrier processes; Current density; Electrons; Impact ionization; Laboratories; MOSFETs; Scattering; Substrates; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
