Title :
Enhanced Vertical Extraction Efficiency From a Thin-Film InGaN–GaN Light-Emitting Diode Using a 2-D Photonic Crystal and an Omnidirectional Reflector
Author :
Lin, C.H. ; Yen, H.H. ; Lai, C.F. ; Huang, H.W. ; Chao, C.H. ; Kuo, H.C. ; Lu, T.C. ; Wang, S.C. ; Leung, K.M.
Author_Institution :
Nat. Chiao Tung Univ., Hsinchu
fDate :
5/15/2008 12:00:00 AM
Abstract :
An InGaN-GaN thin-film vertical-type light-emitting diode with a two-dimensional photonic crystal (PC) on the emitting surface and a TiO-SiO omnidirectional reflector on the bottom was fabricated. The device was investigated by performing a series of experiments and numerical computations. Electroluminescence measurement revealed a strong extraction enhancement in the vertical direction at 433-nm wavelength. The emission spectrum of the light was found to be strongly modified by the PC to have a significantly narrow linewidth of 5 nm. Our experimental results were in accord with those obtained from our numerical findings.
Keywords :
III-V semiconductors; electroluminescence; gallium compounds; indium compounds; light emitting diodes; photonic crystals; silicon compounds; thin film devices; titanium compounds; 2D photonic crystal; InGaN-GaN; TiO-SiO; electroluminescence measurement; enhanced vertical extraction; omnidirectional reflector; thin-film light-emitting diode; wavelength 433 nm; Chaos; Life members; Light emitting diodes; Microcavities; Optical surface waves; Photonic crystals; Quantum well devices; Semiconductor materials; Transistors; Two dimensional displays; Light-emitting diode (LED); omnidirectional reflector (ODR); photonic crystal (PC);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2008.921118
