Title :
A Study of the SEU Performance of InP and SiGe Shift Registers
Author :
Hansen, D.L. ; Marshall, P.W. ; Lopez-Aguado, R. ; Jobe, K. ; Carts, M.A. ; Marshall, C.J. ; Chu, P. ; Meyer, S.F.
Author_Institution :
Boeing Satellite Syst., Los Angeles, CA, USA
Abstract :
Shift registers fabricated using InP and SiGe technology are tested for SEU performance when irradiated with protons and heavy ions. The results are compared to several different models which predict proton cross section from heavy-ion data.
Keywords :
Ge-Si alloys; indium compounds; ion beam effects; proton effects; semiconductor device models; shift registers; InP; InP shift registers; SEU performance; SiGe; SiGe shift registers; heavy ion irradiations; proton irradiation; single event upsets; Circuit testing; Germanium silicon alloys; Heterojunction bipolar transistors; Indium phosphide; Microelectronics; Protons; Satellites; Shift registers; Silicon germanium; Single event upset; Heavy ion; indium phosphide; proton; silicon germanium; single event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2005.850490
