Title :
Performance of InGaAs photodetectors: lateral p-n and p-n-p diodes
Author :
Klockenbrink, R. ; Peiner, E. ; Bartels, A. ; Wehmann, H.-H. ; Schlachetzki, A.
Author_Institution :
Inst. fur Halbleitertechnik, Braunschweig Tech. Univ., Germany
Abstract :
Lateral InGaAs p-n and p-n-p photodiodes were fabricated by area-selective diffusion of Zn through Al2O3 masks. Low dark current densities and a carrier transit-time limited frequency behavior were found. P-n diodes show a 3 dB bandwidth of 19 GHz for an electrode separation of 4 μm. High optical gain was obtained with the lateral p-n-p structure leading to a responsivity of 6-8 A/W in the wavelength range between 1.0 and 1.6 μm, which is considerably more than with the p-n device and conventional MSM detectors.
Keywords :
III-V semiconductors; current density; dark conductivity; diffusion; electrodes; gallium arsenide; indium compounds; infrared detectors; masks; optical fabrication; photodetectors; photodiodes; 1 to 1.6 mum; 19 GHz; 4 mum; Al/sub 2/O/sub 3/; Al/sub 2/O/sub 3/ masks; InGaAs; InGaAs photodetectors; MSM detectors; area-selective diffusion; carrier transit-time limited frequency behavior; electrode separation; high optical gain; lateral p-n diodes; lateral p-n-p structure; low dark current densities; p-n device; p-n-p diodes; responsivity; Bandwidth; Dark current; Diodes; Electrodes; Frequency; Indium gallium arsenide; Optical devices; Photodetectors; Photodiodes; Zinc;
Journal_Title :
Photonics Technology Letters, IEEE
