Resonant-cavity enhanced (RCE) separate absorption and multiplication (SAM) avalanche photodetector (APD)

Author

Murtaza, S.S. ; Anselm, K.A. ; Hu, C. ; Nie, H. ; Streetman, B.G. ; Campbell, J.C.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

Volume

7

Issue

12

fYear

1995

Firstpage

1486

Lastpage

1488

Abstract

We report a highly-efficient and wavelength-selective separate absorption and multiplication (SAM) avalanche photodiode (APD) with a thin (500 /spl Aring/) absorbing layer. The improved characteristics of the photodetector were obtained by placing the absorption and multiplication layers in a Fabry-Perot cavity. An external quantum efficiency of 77% was achieved with a spectral linewidth of less than 4 nm and an avalanche gain of more than 50. Noise measurements indicate that the impact ionization coefficient for electrons is larger than that for holes.

Keywords

Fabry-Perot resonators; avalanche photodiodes; impact ionisation; light absorption; noise measurement; optical films; optical noise; optical resonators; photodetectors; spectral line breadth; 500 A; 77 percent; Fabry-Perot cavity; RCE SAM avalanche photodetector; absorption layers; external quantum efficiency; highly-efficient; impact ionization coefficient; multiplication layers; noise measurements; resonant-cavity enhanced separate absorption and multiplication avalanche photodetector; spectral linewidth; thin absorbing layer; wavelength-selective; Absorption; Fabry-Perot; Frequency; Mirrors; Optical receivers; Optical sensors; Photodetectors; Photodiodes; Resonance; Temperature;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.477291

Filename

477291