DocumentCode :
1139802
Title :
A Highly Linear Broadband CMOS LNA Employing Noise and Distortion Cancellation
Author :
Chen, Wei-Hung ; Liu, Gang ; Zdravko, Boos ; Niknejad, Ali M.
Author_Institution :
Univ. of California, Berkeley
Volume :
43
Issue :
5
fYear :
2008
fDate :
5/1/2008 12:00:00 AM
Firstpage :
1164
Lastpage :
1176
Abstract :
A broadband inductorless low-noise amplifier (LNA) design that utilizes simultaneous noise and distortion cancellation is presented. Concurrent cancellation of the intrinsic third-order distortion from individual stages is exhibited with the common-gate and common-source cascade. The LNA is then limited by the second-order interaction between the common source and common gate stages, which is common in all cascade amplifiers. Further removal of this third-order distortion is achieved by incorporating a second-order-distortion-free circuit technique in the common gate stage. Implemented in 0.13 m CMOS technology, this LNA achieved 16 dBm in both the 900 MHz and 2 GHz bands. Measurements demonstrate that the LNA has a minimum internal gain of 14.5 dB, noise figure of 2.6 dB from 800 MHz to 2.1GHz while drawing 11.6 mA from 1.5 V supply voltage.
Keywords :
CMOS integrated circuits; distortion; interference suppression; low noise amplifiers; wideband amplifiers; CMOS LNA; broadband inductorless low-noise amplifier; cascade amplifiers; distortion cancellation; distortion-free circuit; noise cancellation; Broadband amplifiers; CMOS technology; Linearity; Low-noise amplifiers; MOSFETs; Narrowband; Noise cancellation; Noise figure; Semiconductor device noise; Voltage; Broadband LNA; distortion cancellation; noise cancellation; volterra series analysis;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2008.920335
Filename :
4494645
Link To Document :
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