DocumentCode :
1139874
Title :
Resolution of sidebands in a semiconductor laser frequency modulated by ultrasonic waves
Author :
Whitney, Colin G. ; Pratt, George W., Jr.
Author_Institution :
NASA Elec. Res. Center, Cambridge, MA, USA
Volume :
6
Issue :
6
fYear :
1970
fDate :
6/1/1970 12:00:00 AM
Firstpage :
352
Lastpage :
355
Abstract :
Frequency modulatlon or a semiconductor laser via ultrasonic waves is achieved at a modulating frequency 
MHz for CW operation at 4.2°K. Individual sidebands are resolved whose variation with pressure agree well with theory, indicating that little distortion is present. A modulation index of 6 is achieved corresponding to a frequency deviation of 900 MHz and an acoustic pressure of 3 atmospheres. Under pulsed operation at 4.2°K and 77°K frequency modulation is observed as a blurring of the laser frequency.
MHz for CW operation at 4.2°K. Individual sidebands are resolved whose variation with pressure agree well with theory, indicating that little distortion is present. A modulation index of 6 is achieved corresponding to a frequency deviation of 900 MHz and an acoustic pressure of 3 atmospheres. Under pulsed operation at 4.2°K and 77°K frequency modulation is observed as a blurring of the laser frequency.Keywords :
Cities and towns; Dielectric constant; Frequency modulation; Gallium arsenide; Laser modes; Laser noise; Laser theory; Optical pulses; Quantum well lasers; Semiconductor lasers;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1970.1076470
Filename :
1076470
Link To Document :
