Internal switching in GaAs- GaxAl1-xAs heterostructure lasers

Efficient internal switching and delay effects are observed in a range of temperatures from less than 100 to 400°K in solution grown GaAs-GaxAl1-xAs heterostructure injection laser diodes. The characteristic transition temperature Ttabove which long stimulated emission delays are found, decreases with the laser cavity length (i. e., higher threshold current density). Ttalso decreases with the thickness of the active region. The onset of hole injection seems to occur simultaneously with the appearance of the pronounced delay and -switching effects.