Title :
Temperature-independent carrier mobility in large-grain poly-Si transistors
Author_Institution :
LSI Process Technol. Dept., Oki Electr. Ind. Co. Ltd., Tokyo, Japan
fDate :
9/1/1994 12:00:00 AM
Abstract :
The temperature dependence of carrier mobility in large-grain poly-Si transistors has been studied, and the reason why it depends only weakly on the measuring temperature is revealed. In the study, the mobility in each grain is supposed to have the similar temperature dependence as in bulk Si and is formulated as a function of the temperatures. Thermionic emission model considering this temperature dependence shows that the temperature-independent carrier mobility is due to the balance between the increase of the mobility and the decrease of potential barriers
Keywords :
carrier mobility; characteristics measurement; elemental semiconductors; insulated gate field effect transistors; semiconductor device models; silicon; thermionic electron emission; MOSFETs; Si; large-grain polysilicon transistors; measuring temperature; potential barriers; temperature-independent carrier mobility; thermionic emission model; Annealing; Crystallization; Grain boundaries; MOSFETs; Plasma temperature; Semiconductor films; Temperature dependence; Temperature measurement; Thermionic emission; Transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
