Title :
Modeling a Broadband Bismuth-Doped Fiber Amplifier
Author_Institution :
Dept. of Electron. Eng., Shanghai Jiao Tong Univ., Shanghai
Abstract :
In this paper, we present the energy level, transition configuration, and numerical model of a bismuth-doped fiber amplifier for the first time, to the best of authorspsila knowledge. With a three-level system, the rate and power propagation equations of the model are solved to examine the effect of the fiber parameter and pump power on the bandwidth of the gain spectra. It can be predicted that when excited at wavelength in the 800-900 nm range, the amplifier can have a ultrabroad gain spectra in the 1.2-1.62 mum range, which cover the low-loss windows of the all-wave fiber.
Keywords :
bismuth; optical fibre amplifiers; optical glass; optical pumping; spectral line breadth; wavelength division multiplexing; SiO2:Bi; active ion concentration; bismuth-doped silicate glass system; broadband bismuth-doped fiber amplifier; broadband gain spectra; energy level; fiber length; gain spectral bandwidth; numerical model; power propagation equations; pump power; rate equations; three-level system; transition configuration; wavelength 1.2 mum to 1.62 mum; wavelength 800 nm to 900 nm; wavelength-division multiplexing technology; Bandwidth; Bismuth; Broadband amplifiers; Energy states; Glass; Numerical models; Optical fiber amplifiers; Optical pumping; Particle beam optics; Power system modeling; Bismuth ion; broadband gain spectra; energy level; fiber amplifier; numerical model;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2008.2010269
