Title :
Active SAW devices on 2DEG heterostructures
Author :
Calle, F. ; Grajal, J. ; Pedros, J.
Author_Institution :
Inst. de Sistemas Optoelectronicos y Microtecnologia, Univ. Politecnica de Madrid, Spain
Abstract :
Active surface acoustic wave filters with voltage-controlled insertion losses have been achieved using AlGaN/GaN 2DEG heterostuctures as piezoelectric substrates. Transfer control is performed by moderate DC voltages between the fingers in either or both input and output interdigital transducers. These filters can be integrated into future MMIC circuits based on AlGaN/GaN high electron mobility transistors.
Keywords :
III-V semiconductors; active filters; gallium compounds; interdigital transducers; molecular beam epitaxial growth; surface acoustic wave filters; two-dimensional electron gas; wide band gap semiconductors; 2DEG heterostructures; AIGaN-GaN high electron mobility transistors; Al2O3; AlGaN-GaN; AlGaN-GaN 2DEG heterostuctures; MMIC circuits; active SAW devices; active surface acoustic wave filters; interdigital transducers; molecular beam epitaxial growth; piezoelectric substrates; transfer control; voltage controlled insertion losses;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20046321
