Title :
Mean lifetime calculations of quantum well structures: a rigorous analysis
Author :
Ghatak, Ajoy K. ; Goyal, I.C. ; Gallawa, R.L.
Author_Institution :
Dept. of Phys., Indian Inst. of Technol., New Delhi, India
fDate :
2/1/1990 12:00:00 AM
Abstract :
A matrix method that is applicable to an arbitrary potential variation represented by a set of linear functions such as multiple quantum well structures in the presence of a static electric field is described. An analytical expression for the mean lifetime of the quasi-bound state of a single quantum well in the presence of a static electric field is obtained
Keywords :
carrier lifetime; electric fields; matrix algebra; semiconductor quantum wells; arbitrary potential variation; linear functions; matrix method; mean lifetime; multiple quantum well structures; quantum well structures; quasi-bound state; single quantum well; static electric field; Bismuth; Convergence; Eigenvalues and eigenfunctions; NIST; Physics; Potential energy; Schrodinger equation; Slabs;
Journal_Title :
Quantum Electronics, IEEE Journal of
