Title :
A New Isolation Technology for Automotive Power-Integrated-Circuit Applications
Author :
Sun, Jingmeng ; Jiang, Frank X C ; Guan, Lingpeng ; Xiong, Zhibin ; Yan, Guizhen ; Sin, Johnny K O
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
In this paper, a new bulk silicon isolation structure with wafer-thick trenches is proposed for automotive (42 V) power-integrated-circuit applications. This technology provides the advantages of complete isolation with lower wafer cost and higher thermal-dissipation capability as compared with the silicon-on-insulator technology. Experimental results show that the new isolation structure can provide complete electrical isolation and with a 13% reduction in thermal resistance.
Keywords :
cooling; isolation technology; power integrated circuits; silicon; silicon-on-insulator; thermal resistance; wafer-scale integration; Si; automotive power-integrated-circuit applications; bulk silicon isolation structure; electrical isolation; isolation technology; silicon-on-insulator technology; thermal resistance; thermal-dissipation capability; voltage 42 V; wafer-thick trenches; Automotive engineering; Costs; Isolation technology; Power integrated circuits; Power transistors; Protection; Silicon compounds; Silicon on insulator technology; Sun; Thermal resistance; Automotive; VDMOS; heat-dissipation capability; power integrated circuit (PIC); power transistors; trench isolation;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2009.2026089
