Silicon Solar Cell Performance at High Intensities

The theoretical and experimental work performed since 1960 in the area of high-intensity and high-temperature operation of silicon and gallium arsenide photovoltaic devices is reviewed. Test results for conventional 5-grid silicon cells, for specially designed 13-grid silicon cells, and for a GaAs cell are presented parametrically for the illumination intensity range from 0.07 to 2.8 W/cm2 and the temperature range from 30 to 1 50°C. The data cover the 3 points on the currentvoltage characteristic required to reconstruct the full characteristic in the power-generating quadrant. The 13-grid silicon cells showed much better performance than the GaAs cell.