• DocumentCode
    11449
  • Title

    Ultralow Power Circuit Design With Subthreshold/Near-Threshold 3-D IC Technologies

  • Author

    Samal, Sandeep Kumar ; Yarui Peng ; Pathak, Mohit ; Sung Kyu Lim

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
  • Volume
    5
  • Issue
    7
  • fYear
    2015
  • fDate
    Jul-15
  • Firstpage
    980
  • Lastpage
    990
  • Abstract
    The requirement of ultralow power and energy efficient systems is becoming more and more important with the increase in the use of miniaturized portable devices and unsupervised remote sensor systems. 3-D integration is an emerging technology that helps in reducing footprint as well as power. In this paper, we study in detail the combined benefits of 3-D ICs and low-voltage supply designs to obtain maximum energy efficiency. We implement different types of circuits in conventional 2-D and through-silicon-via-based 3-D designs at different supply voltages varying from nominal to subthreshold voltages. The impact of 3-D integration on these different types of circuits is analyzed. Our study is based on power and energy comparison of full GDSII layouts. Our study confirms that subthreshold/near-threshold circuits indeed offer a few orders of magnitude power versus performance tradeoff with further improvement due to 3-D implementation. In addition, 3-D designs reduce the footprint area up to 78% and wirelength up to 33% compared with the 2-D counterpart for individual design benchmarks. Our studies also show that thermal and IR drop issues are negligible in subthreshold 3-D implementation due to its extreme low-power operation. Finally, we demonstrate the low-power and high-memory bandwidth advantages of many-core 3-D subthreshold circuits.
  • Keywords
    integrated circuit layout; low-power electronics; three-dimensional integrated circuits; 2D integrated circuit design; full GDSII layout; low voltage supply designs; maximum energy efficiency; near-threshold 3D IC technology; power versus performance trade-off; subthreshold 3D IC technology; thermal effect; through silicon via based 3D design; ultralow power circuit design; voltage drop issues; Integrated circuits; Inverters; Logic gates; Random access memory; Standards; Threshold voltage; Transistors; 3-D IC; subthreshold/near-threshold operation; through-silicon via (TSV); ultralow power; ultralow power.;
  • fLanguage
    English
  • Journal_Title
    Components, Packaging and Manufacturing Technology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    2156-3950
  • Type

    jour

  • DOI
    10.1109/TCPMT.2015.2441066
  • Filename
    7156066