A 20 GHz power amplifier design on novel nonlinear model

Author

Zonghua Zheng ; Lingling Sun ; Jun Liu

Author_Institution

Inst. of VLSI Design, Zhejiang Univ., Hangzhou, China

fYear

2014

fDate

27-29 Aug. 2014

Firstpage

17

Lastpage

19

Abstract

This paper designs a 20 GHz power amplifier based on a novel model which is the quadratic polynomial expansion of nonlinear scattering function. The novel model is capable of accurately computing the voltage of device under any fundamental and harmonic frequency load impedance changing implemented with Frequency Domain Defined Device (FDD) component in the ADS. Through the new model, it is easy to find out the optimal fundamental and harmonic load impedance. The designed PA achieves a peak power-added efficiency (PAE) of 35.1% and the saturated output power of 21 dBm in PP1010MS EEHEMT operating at 20 GHz.

Keywords

microwave power amplifiers; nonlinear functions; polynomials; ADS; FDD component; PAE; PP1010MS EEHEMT; frequency 20 GHz; frequency domain defined device; harmonic frequency load impedance; nonlinear model; nonlinear scattering function; power amplifier design; power-added efficiency; quadratic polynomial expansion; Harmonic analysis; Impedance; Integrated circuit modeling; Load modeling; Power amplifiers; Power generation; Scattering; EEHEMT; Nonlinear scattering function; Power amplifier; Quadratic polynomial;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics (ICSE), 2014 IEEE International Conference on

Conference_Location

Kuala Lumpur

Type

conf

DOI

10.1109/SMELEC.2014.6920784

Filename

6920784