Title :
Oxides grown on textured single-crystal silicon-dependence on process and application of EEPROMs
Author :
Fong, Yupin ; Wu, Albert Tsung-Tse ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fDate :
3/1/1990 12:00:00 AM
Abstract :
The electrical properties of oxides grown on textured single-crystal silicon (TSC oxides) are dependent on the process used to roughen or texture the single-crystal silicon surface. The effects of different processing steps on the I-V, C-V, charge trapping, interface trap generation, and breakdown characteristics of TSC oxides are examined. By choosing a particular set of processing steps, a TSC oxide can exhibit enhanced conduction and very good charge trapping and breakdown characteristics, which make it an interesting dielectric for EEPROM applications. Floating-gate EEPROMs fabricated using this TSC oxide demonstrate the feasibility of this new technology. Programming, cycling, and retention characteristics of this EEPROM are presented. In particular, the retention data of the TSC EEPROM show an improvement over those of EEPROMs using oxides grown on untextured single-crystal silicon
Keywords :
EPROM; dielectric thin films; electric breakdown of solids; elemental semiconductors; etching; integrated memory circuits; oxidation; silicon; surface texture; C-V characteristics; I-V characteristics; Si-SiO2; TSC oxides; breakdown characteristics; capacitors; charge trapping; electrical properties; etching; floating gate EEPROM; interface trap generation; programming; retention characteristics; textured single crystal Si; Capacitance-voltage characteristics; EPROM; Electric breakdown; Fabrication; Nonvolatile memory; Rough surfaces; Silicon; Surface texture; Tunneling; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
