DocumentCode
1147653
Title
Hole confinement in a Si/GeSi/Si quantum well on SIMOX
Author
Nayak, D.K. ; Woo, J.C.S. ; Park, J.S. ; Wang, K.L. ; MacWilliams, K.P.
Author_Institution
Logic Technol. Div., Adv. Micro Devices Inc., Sunnyvale, CA, USA
Volume
43
Issue
1
fYear
1996
fDate
1/1/1996 12:00:00 AM
Firstpage
180
Lastpage
182
Abstract
In this work, hole confinement in a MBE-grown Si/GeSi/Si quantum well on SIMOX substrate is investigated in detail using device simulation, electronic measurements, and optical techniques. The hole confinement is clearly demonstrated from GeSi PMOSFET measurements. The experimental results are in good agreement with device simulation results. The quantum confinement of holes in the GeSi quantum well on SIMOX is confirmed using photoluminescence measurements
Keywords
Ge-Si alloys; MOSFET; SIMOX; elemental semiconductors; photoluminescence; semiconductor materials; semiconductor quantum wells; silicon; MBE-grown Si/GeSi/Si quantum well; PMOSFET; SIMOX substrate; Si-GeSi-Si; device simulation; electronic measurements; hole confinement; optical techniques; photoluminescence; Capacitance measurement; Fabrication; Germanium silicon alloys; MOSFET circuits; Photoluminescence; Pollution measurement; Quantum capacitance; Silicon germanium; Time measurement; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.477614
Filename
477614
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