Title :
A novel CID structure for improved breakdown voltage
Author :
Wei, Chia-Yu ; Woodbury, H. Hugh ; Wang, Samuel C H
Author_Institution :
Gen. Electr. Corp. Res. & Dev., Schenectady, NY, USA
fDate :
3/1/1990 12:00:00 AM
Abstract :
Charge injection devices (CIDs) used as infrared detectors incorporate a field plate between the sensing gate electrodes to serve as a channel stop. Two-dimensional computer simulations indicate that such sensing gate/field plate configurations exhibit an enhanced electric field at the edge of the sensing gate electrode. They further show that the edge field enhancement can be eliminated if the field plate is biased into deep depletion. However, in order to preserve the channel isolation, the bias of the field plate cannot be set beyond the flatband voltage. These problems have been solved with an InSb CID cell in which a buffer gate is inserted between the sensing gate and the field plate with a buffer gate electrically tied to the sensing gate, making it an integral whole. This design has shown more than a doubling of the breakdown voltage with a corresponding doubling of the well capacity without degrading other detector characteristics
Keywords :
CCD image sensors; III-V semiconductors; electric breakdown of solids; indium antimonide; infrared detectors; CID structure; InSb charge injection device cell; breakdown voltage; channel isolation; deep depletion; edge field enhancement; infrared detectors; sensing gate electrodes; sensing gate/field plate configurations; Breakdown voltage; Computer simulation; Dark current; Degradation; Electrodes; Infrared detectors; Low voltage; Metal-insulator structures; Photonic band gap; Testing;
Journal_Title :
Electron Devices, IEEE Transactions on