Memristive behavior of HF-etched sputtered titania thin films

This paper demonstrates the fabrication method and reports the essential physical characterization of a memristive device with TiO₂ or titania as an active layer. The memristive device was fabricated on glass substrate. Titania thin films were grown in two layers by RF-magnetron sputtering technique onto the substrates. The first layer is a titania layer etched by 1% HF (Hydrofluoric acid) before the deposition of the second layer. The etching time was varied; for 5 seconds and 7 seconds. Current-voltage (I-V) curves of the samples were measured from the voltage loop ranging from 0V to -5V, -5V to 5V then back to 0V and also from -5V to 5V then back to -5V. It was proven that the HF-etch give an improvement in the memristive behavior when it is etched at 7 s.